| PART |
Description |
Maker |
| IRF7831PBF IRF7831TRPBF IRF7831PBF-15 |
Ultra-Low Gate Impedance
HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 3.6mΩ@VGS = 10V , Qg(typ.) = 40nC )
HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 3.6mヘ@VGS = 10V , Qg(typ.) = 40nC )
High Frequency Point-of-Load Synchronous Buck Converter
|
International Rectifier
|
| FDPF16N50UT FDP16N50U |
R DS(on) = 370 mΩ ( Typ.) @ VGS = 10 V, ID = 7.5 A
N-Channel UniFETTM Ultra FRFET MOSFET
|
Fairchild Semiconductor
|
| 2SK3456 |
N-Channel MOSFET
Low gate charge QG = 30 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 12 A)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| SKDH116-L75 SKDH116_12-L75 SKDH116_16-L75 SKDH116/ |
三相整流桥IGBT的制动斩波器
MOSFET; ID (A): 0.03; VDS (V): 6; Pch : 0.15; |yfs| (S) typ: 0.029; PG (dB) typ: 22; Ciss (pF) typ: 2.1; NF (dB) typ: 1.75; IDSS (mA): -; Package: MPAK-4
3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
| KDB3632 FDB3632 |
rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A UIS Capability (Single Pulse and Repetitive Pulse)
|
TY Semiconductor Co., L...
|
| S7978 |
MOSFET, Switching; VDSS (V): -60; ID (A): -40; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: 0.033; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 25; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
| S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
|
Hamamatsu Photonics
|
| S7686 |
MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.14; RDS (ON) typ. (ohm) @4V[4.5V]: 0.2; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 10.8; Package: DPAK (L)- (2)
|
Hamamatsu Photonics
|
| 2SK2415 |
Low On-Resistance RDS(on)1 = 0.10 MAX. ( VGS = 10 V, ID = 4.0A) Low Ciss Ciss = 570 pF TYP.
|
TY Semiconductor Co., Ltd
|
| 2SA1256 |
High fT (230MHz typ), and small Cre (1.1pF typ). Small NF (2.5dB typ).
|
TY Semiconductor Co., Ltd
|
| S2744 S2744-08 S2744-09 S3588-08 S3588-09 |
MOSFET, Switching; VDSS (V): 150; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.089; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
Si PIN photodiode Large area sensors for scintillation detection 硅PIN光电二极管的大面积闪烁探测传感器
|
Hamamatsu Photonics K.K.
|
| S5573 |
MOSFET, Switching; VDSS (V): 600; ID (A): 30; Pch : 200; RDS (ON) typ. (ohm) @10V: 0.2; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
|
Hamamatsu Photonics
|
